Novel hot-electron effects in the channel of MOSFET's observed by capacitance measurementsSCHMITT-LANDSIEDEL, D; DORDA, G.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 7, pp 1294-1301, issn 0018-9383Article

Evaluation of electron beam welding technique for the integration of robust sensor elements into high-pressure automotive systemsSCHMID, U; SCHMITT-LANDSIEDEL, D; KRÖTZ, G et al.Microsystem technologies. 2008, Vol 14, Num 8, pp 1193-1203, issn 0946-7076, 11 p.Article

A volumetric flow sensor for automotive injection systemsSCHMID, U; KRÖTZ, G; SCHMITT-LANDSIEDEL, D et al.Journal of micromechanics and microengineering (Print). 2008, Vol 18, Num 4, issn 0960-1317, 045006.1-045006.9Article

Block-decoded sense-amplifier driver for high-speed sensing in DRAM'sGEIB, H; RAAB, W; SCHMITT-LANDSIEDEL, D et al.IEEE journal of solid-state circuits. 1992, Vol 27, Num 9, pp 1286-1288, issn 0018-9200Article

A pipelined 330-MHz multiplierNOLL, T. G; SCHMITT-LANDSIEDEL, D; KLAR, H et al.IEEE journal of solid-state circuits. 1986, Vol 21, Num 3, pp 411-416, issn 0018-9200Article

Hot-carrier degradation effects relevant in real operation of metal oxide semiconductor field effect transistorsWEBER, W; QIN WANG; BROX, M et al.Japanese journal of applied physics. 1990, Vol 29, Num 12, pp L2275-L2278, issn 0021-4922, 2Article

Influence of MOSFET I-V characteristics on switching delay time of CMOS inverters after hot-carrier stressQIN WANG; KRAUTSCHNEIDER, W. H; WEBER, W et al.IEEE electron device letters. 1991, Vol 12, Num 5, pp 238-240, issn 0741-3106Article

Use of a CMOS static memory array as a technology test vehicleSCHMITT-LANDSIEDEL, D; WINNERL, J; NEUENDORF, G et al.Quality and reliability engineering international. 1992, Vol 8, Num 3, pp 219-223, issn 0748-8017Article

Optimization of high-speed CMOS logic circuits with analytical models for signal delay, chip area, and dynamic power dissipationHOPPE, B; NEUENDORF, G; SCHMITT-LANDSIEDEL, D et al.IEEE transactions on computer-aided design of integrated circuits and systems. 1990, Vol 9, Num 3, pp 236-246, issn 0278-0070, 11 p.Article

Pipeline architecture for fast CMOS buffer RAM'sSCHMITT-LANDSIEDEL, D; HOPPE, B; NEUENDORF, G et al.IEEE journal of solid-state circuits. 1990, Vol 25, Num 3, pp 741-747, issn 0018-9200, 7 p.Conference Paper

Electromigration resistance of sputtered silver lines using different patterning techniquesHAUDER, M; HANSCH, W; GSTÖTTNER, J et al.Microelectronic engineering. 2002, Vol 60, Num 1-2, pp 51-57, issn 0167-9317Conference Paper

The impact of intra-die device parameter variations on path delays and on the design for yield of low voltage digital circuitsEISELE, M; BERTHOLD, J; SCHMITT-LANDSIEDEL, D et al.IEEE transactions on very large scale integration (VLSI) systems. 1997, Vol 5, Num 4, pp 360-368, issn 1063-8210Conference Paper

Design based failure analysis and yield improvement in CMOS-circuitsGRIEP, S; KEITEL-SCHULZ, D; SCHMITT-LANDSIEDEL, D et al.Quality and reliability engineering international. 1996, Vol 12, Num 4, pp 221-227, issn 0748-8017Conference Paper

Etching characteristics and mechanical properties of a-SiC:H thin filmsSCHMID, U; EICKHOFF, M; RICHTER, Ch et al.Sensors and actuators. A, Physical. 2001, Vol 94, Num 1-2, pp 87-94, issn 0924-4247Article

Innovative devices for integrated circuits : A design perspectiveSCHMITT-LANDSIEDEL, D; WERNER, C.Solid-state electronics. 2009, Vol 53, Num 4, pp 411-417, issn 0038-1101, 7 p.Article

Dynamic degradation in MOSFET's. II, Application in the circuit environmentWEBER, W; BROX, M; KÜNEMUND, T et al.I.E.E.E. transactions on electron devices. 1991, Vol 38, Num 8, pp 1859-1867, issn 0018-9383Article

Complementary multi-gate tunnelling FETs: fabrication, optimisation and application aspectsFULDE, M; HEIGL, A; WACHUTKA, G et al.International journal of nanotechnology. 2009, Vol 6, Num 7-8, pp 628-639, issn 1475-7435, 12 p.Conference Paper

Scaling properties of the tunneling field effect transistor (TFET) : Device and circuitNIRSCHL, Th; HENZLER, St; EINFELD, J et al.Solid-state electronics. 2006, Vol 50, Num 1, pp 44-51, issn 0038-1101, 8 p.Conference Paper

Chip-level ESD simulation for fail detection and design guidanceDRÜEN, S; STREIBL, M; ZÄNGL, F et al.IEEE international reliability physics symposium. 2004, pp 603-604, isbn 0-7803-8315-X, 1Vol, 2 p.Conference Paper

Void formation and electromigration in sputtered Ag lines with different encapsulationsHAUDER, M; GSTÖTTNER, J; HANSCH, W et al.Sensors and actuators. A, Physical. 2002, Vol 99, Num 1-2, pp 137-143, issn 0924-4247, 7 p.Conference Paper

Comparison of partially and fully depleted SOI transistors down to the sub-50-nm gate length regimeDREESKORNFELD, L; HARTWICH, J; LANDGRAF, E et al.Proceedings - Electrochemical Society. 2003, pp 361-366, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

Precise quantitative evaluation of the hot-carrier induced drain series resistance degradation in LATID-n-MOSFETsWALTER, G. H; WEBER, W; BREDERLOW, R et al.Microelectronics and reliability. 1998, Vol 38, Num 6-8, pp 1063-1068, issn 0026-2714Conference Paper

Method for precise determination of the statistical distribution of the input offset voltage of differential stagesTHEWES, R; SCHINDHELM, T; TIEBOUT, M et al.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1823-1826, issn 0026-2714Conference Paper

Silver metal organic chemical vapor deposition for advanced silver metallizationGAO, L; HÄRTER, P; LINSMEIER, Ch et al.Microelectronic engineering. 2005, Vol 82, Num 3-4, pp 296-300, issn 0167-9317, 5 p.Conference Paper

Chemical mechanical polishing of silver damascene structuresHAUDER, M; GSTÖTTNER, J; GAO, L et al.Microelectronic engineering. 2002, Vol 64, Num 1-4, pp 73-79, issn 0167-9317Conference Paper